Nanowires and Nanorings at the Atomic Level
نویسندگان
چکیده
منابع مشابه
Nanowires and nanorings at the atomic level.
The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent h...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2003
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.91.096102